Scaled Vertical-Nanowire Heterojunction Tunnelling Transistors with Extreme Quantum Confinement
A Breakthrough in Achieving High-Performance, Energy-Efficient Electronics Using Vertically Scaled Nanowire Heterojunction Tunneling Transistors under Extreme Quantum Confinement Academic Background The rapid development of data-driven computing and artificial intelligence has set higher demands for energy-efficient electronic devices. However, fur...