Integration of High-κ Native Oxides of Gallium for Two-Dimensional Transistors

Report on the Integration of High-κ Gallium Oxide in 2D Transistors Academic Background With the continuous advancement in semiconductor technology, 2D materials (such as molybdenum disulfide, MoS₂) are considered promising candidates for next-generation transistor channel materials due to their unique electrical properties and atomic-scale thickne...

Rapid Cryogenic Characterization of 1,024 Integrated Silicon Quantum Dot Devices

Rapid Cryogenic Characterization of 1,024 Integrated Silicon Quantum Dot Devices: A Review Background Quantum computing, as a disruptive technology in computing, holds the promise of far surpassing traditional high-performance computers in areas such as materials science, drug discovery, and big data search. Silicon-based quantum dots (Quantum Dot,...

An N-Doped Capacitive Transparent Conductor for All-Polymer Electrochromic Displays

Progress in All-Polymer Electrochromic Displays: Innovative Applications of N-Doped Transparent Conductive Polymer Background and Significance Display technology is omnipresent in modern society, spanning applications from consumer electronics to medical devices and wearable technology. Although traditional emissive displays (e.g., OLEDs and LCDs) ...

Soft Electronics Based on Particle Engulfment Printing

Soft Electronics Research Based on Particle Engulfment Printing Academic Background With the rapid development of wearable devices, health monitoring, medical equipment, and human-machine interaction, soft electronics have garnered significant attention because of their ability to seamlessly integrate with biological systems. Traditional rigid elec...

Three-Dimensional Transistors with Two-Dimensional Semiconductors for Future CMOS Scaling

Academic Paper Report: Three-Dimensional Transistors with Two-Dimensional Semiconductors for Future CMOS Scaling Introduction In recent years, as silicon-based complementary metal-oxide-semiconductor (CMOS) technology approaches its physical limits, the continued miniaturization and performance optimization of next-generation microelectronics face ...

An Optoelectronic Microwave Synthesizer with Frequency Tunability and Low Phase Noise

An Optoelectronic Microwave Synthesizer with Frequency Tunability and Low Phase Noise

Optoelectronic Microwave Synthesizer: Combining Frequency Tunability with Low Phase Noise Academic Background In modern communication, navigation, and radar systems, frequency-tunable and low-noise microwave sources are critical. Traditional electronic microwave synthesizers offer frequency tunability but exhibit high phase noise, limiting their us...

Reconfigurable In-Sensor Processing Based on a Multi-Phototransistor–One-Memristor Array

Report on the Academic Paper: “Reconfigurable In-Sensor Processing Based on a Multi-Phototransistor-One-Memristor Array: A New Visual Computing Platform Combining Machine Learning and Brain-Inspired Neural Networks” Academic Background and Problem Identification Artificial vision systems play a significant role in intelligent edge computing. Howeve...

High-Performance p-Type Field-Effect Transistors Using Substitutional Doping and Thickness Control of Two-Dimensional Materials

High-Performance P-Type Field-Effect Transistors: Substitutional Doping and Thickness Control in Two-Dimensional Materials Academic Background As semiconductor technology progresses, silicon-based field-effect transistors (FETs) are approaching fundamental physical limits in performance enhancement. To overcome these challenges, researchers have be...

Scaled Vertical-Nanowire Heterojunction Tunnelling Transistors with Extreme Quantum Confinement

A Breakthrough in Achieving High-Performance, Energy-Efficient Electronics Using Vertically Scaled Nanowire Heterojunction Tunneling Transistors under Extreme Quantum Confinement Academic Background The rapid development of data-driven computing and artificial intelligence has set higher demands for energy-efficient electronic devices. However, fur...

Memristors with Analogue Switching and High On/Off Ratios Using a Van der Waals Metallic Cathode

Research on Analog Memristors with Large On/Off Ratios Using 2D Van der Waals Metallic Cathodes Academic Background With the rapid development of artificial intelligence (AI) applications, traditional Von Neumann architectures are facing performance bottlenecks in data-intensive computing tasks. Neuromorphic computing is an emerging paradigm capabl...