High-Performance p-Type Field-Effect Transistors Using Substitutional Doping and Thickness Control of Two-Dimensional Materials

Physics, Condensed Matter Physics, Engineering, Electrical Engineering, Materials Science, Information Science, Semiconductors and Information Devices,
two-dimensional materials   p-type field-effect transistors   substitutional doping   thickness control   contact resistance   quantum confinement effects   transition metal dichalcogenides  

High-Performance P-Type Field-Effect Transistors: Substitutional Doping and Thickness Control in Two-Dimensional Materials Academic Background As semiconductor technology progresses, silicon-based field-effect transistors (FETs) are approaching fundamental physical limits in performance enhancement. To overcome these challenges, researchers have be...