Review of Ultrafast Nano-Spectroscopy and Nano-Imaging Applications with Tip-Based Microscopy

Latest Advances in Ultrafast Nano-Spectroscopy and Imaging Technologies: Applications of Tip-Based Microscopy Research Background In recent years, with the rapid development of optical microscopy technology, scientists have made significant progress in understanding nanoscale physical phenomena. However, traditional far-field optical microscopy is ...

Wide-Band High-Performance Optical Modulator Based on a Stack of Graphene and h-BN Layers

Research on High-Performance Wideband Optical Modulators: Innovative Design Based on Stacked Graphene and Hexagonal Boron Nitride Structures Research Background and Problem Statement With the rapid development of optical communication technology, electro-optic modulators play a crucial role in modern telecommunication systems. However, achieving hi...

Analyzing Multiplicative Noise Effects on Stochastic Resonant Nonlinear Schrödinger Equation via Two Integration Algorithms

Research Background and Problem Introduction Nonlinear wave systems are core research topics in fields such as physics, optics, and condensed matter physics. However, real-world nonlinear wave systems are often subject to random noise interference, which can significantly alter the behavior of waves, such as soliton propagation, wave turbulence for...

Anomalous Suppression of Large-Scale Density Fluctuations in Classical and Quantum Spin Liquids

Anomalous Suppression of Large-Scale Density Fluctuations in Classical and Quantum Spin Liquids Academic Background Classical spin liquids (CSLs) and quantum spin liquids (QSLs) are highly attractive research areas in condensed matter physics. CSLs are states of matter that do not exhibit long-range magnetic order and have extensive ground-state de...

Extended Quantum Anomalous Hall States in Graphene/hBN Moiré Superlattices

Extended Quantum Anomalous Hall States in Graphene/Hexagonal Boron Nitride Moiré Superlattices Academic Background In recent years, the behavior of electrons in topological flat bands has attracted widespread attention in the field of condensed matter physics. Electrons in topological flat bands can form new topological states driven by strong corr...

Superconductivity in 5.0° Twisted Bilayer WSe2

Background Introduction In recent years, the discovery of superconductivity in twisted bilayer and trilayer graphene has sparked widespread interest. The key feature of these systems lies in the interplay between interlayer coupling and moiré superlattices, which gives rise to low-energy flat bands with strong correlations. Similar flat bands can a...

A Zero External Magnetic Field Quantum Standard of Resistance at the 10⁻⁹ Level

Academic Background and Problem Statement In metrology, the quantum Hall effect (QHE) and the Josephson effect respectively provide quantum standards for electrical resistance (ohm) and voltage (volt). However, conventional quantum Hall resistance standards (QHRs) rely on strong external magnetic fields (typically requiring superconducting magnets ...

High-Performance p-Type Field-Effect Transistors Using Substitutional Doping and Thickness Control of Two-Dimensional Materials

High-Performance P-Type Field-Effect Transistors: Substitutional Doping and Thickness Control in Two-Dimensional Materials Academic Background As semiconductor technology progresses, silicon-based field-effect transistors (FETs) are approaching fundamental physical limits in performance enhancement. To overcome these challenges, researchers have be...

A Seamless Graphene Spin Valve Based on Proximity to Van der Waals Magnet Cr2Ge2Te6

Construction of a Seamless Graphene Spin Valve: Proximity Effects from van der Waals Magnet Cr₂Ge₂Te₆ Research Background and Significance Graphene, as a two-dimensional material, has significant potential applications in spintronics due to its excellent electron transport properties and long spin diffusion length. However, graphene’s intrinsic spi...

Fractional Quantum Hall Phases in High-Mobility n-Type Molybdenum Disulfide Transistors

Research Report on the Paper on Fractional Quantum Hall Phases in High Mobility n-Type Molybdenum Disulfide Transistors Background and Motivation At low temperatures, field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) theoretically provide high carrier mobility, strong spin-orbit coupling, and intrinsic ...