Three-Dimensional Transistors with Two-Dimensional Semiconductors for Future CMOS Scaling

Academic Paper Report: Three-Dimensional Transistors with Two-Dimensional Semiconductors for Future CMOS Scaling Introduction In recent years, as silicon-based complementary metal-oxide-semiconductor (CMOS) technology approaches its physical limits, the continued miniaturization and performance optimization of next-generation microelectronics face ...

High-Performance p-Type Field-Effect Transistors Using Substitutional Doping and Thickness Control of Two-Dimensional Materials

High-Performance P-Type Field-Effect Transistors: Substitutional Doping and Thickness Control in Two-Dimensional Materials Academic Background As semiconductor technology progresses, silicon-based field-effect transistors (FETs) are approaching fundamental physical limits in performance enhancement. To overcome these challenges, researchers have be...

Light-Emitting Diodes Based on Intercalated Transition Metal Dichalcogenides with Suppressed Efficiency Roll-Off at High Generation Rates

Research Report on Light-emitting Diodes Based on Intercalated Transition Metal Dichalcogenides with Suppressed Efficiency Roll-off at High Generation Rates Background and Research Significance In recent years, light-emitting diodes (LEDs) based on two-dimensional (2D) materials have shown promising applications in fields such as display technology...

Growth-Based Monolithic 3D Integration of Single-Crystal 2D Semiconductors

Research on Growth-Based Monolithic 3D Integration of Single-Crystal 2D Semiconductors Academic Background With the rapid development of the modern electronics industry, three-dimensional (3D) integration technology has gradually become an important means to enhance the performance of electronic devices. Traditional two-dimensional (2D) integrated ...