Integration of High-κ Native Oxides of Gallium for Two-Dimensional Transistors

Chemistry, Nanoscience, Engineering, Electrical Engineering, Materials Science, Information Science, Semiconductors and Information Devices,
2D semiconductors   gallium oxide   high-κ dielectric   transistors   surface-tension-driven method   ultrathin layer   interface quality  

Report on the Integration of High-κ Gallium Oxide in 2D Transistors Academic Background With the continuous advancement in semiconductor technology, 2D materials (such as molybdenum disulfide, MoS₂) are considered promising candidates for next-generation transistor channel materials due to their unique electrical properties and atomic-scale thickne...