Integration of High-κ Native Oxides of Gallium for Two-Dimensional Transistors

Report on the Integration of High-κ Gallium Oxide in 2D Transistors Academic Background With the continuous advancement in semiconductor technology, 2D materials (such as molybdenum disulfide, MoS₂) are considered promising candidates for next-generation transistor channel materials due to their unique electrical properties and atomic-scale thickne...

Three-Dimensional Transistors with Two-Dimensional Semiconductors for Future CMOS Scaling

Academic Paper Report: Three-Dimensional Transistors with Two-Dimensional Semiconductors for Future CMOS Scaling Introduction In recent years, as silicon-based complementary metal-oxide-semiconductor (CMOS) technology approaches its physical limits, the continued miniaturization and performance optimization of next-generation microelectronics face ...

Growth-Based Monolithic 3D Integration of Single-Crystal 2D Semiconductors

Research on Growth-Based Monolithic 3D Integration of Single-Crystal 2D Semiconductors Academic Background With the rapid development of the modern electronics industry, three-dimensional (3D) integration technology has gradually become an important means to enhance the performance of electronic devices. Traditional two-dimensional (2D) integrated ...