Fractional Quantum Hall Phases in High-Mobility n-Type Molybdenum Disulfide Transistors

Research Report on the Paper on Fractional Quantum Hall Phases in High Mobility n-Type Molybdenum Disulfide Transistors Background and Motivation At low temperatures, field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) theoretically provide high carrier mobility, strong spin-orbit coupling, and intrinsic ...

Nonlinear Coupling of Closely Spaced Modes in Atomically Thin MoS2 Nanoelectromechanical Resonators

Study of Nonlinear Coupling in Atomically Thin MoS₂ Nanoelectromechanical Resonators Academic Background With the rapid development of nanotechnology, Nanoelectromechanical Systems (NEMS) have shown great potential in fields such as sensors, signal processing, and quantum computing. Particularly, two-dimensional (2D) materials like molybdenum disul...