Reconfigurable In-Sensor Processing Based on a Multi-Phototransistor–One-Memristor Array

Chemistry, Nanoscience, Engineering, Electrical Engineering, Materials Science, Information Science, Semiconductors and Information Devices, Artificial Intelligence,
in-sensor computing   photonic memristors   neural network architectures   image processing   machine vision  

Report on the Academic Paper: “Reconfigurable In-Sensor Processing Based on a Multi-Phototransistor-One-Memristor Array: A New Visual Computing Platform Combining Machine Learning and Brain-Inspired Neural Networks” Academic Background and Problem Identification Artificial vision systems play a significant role in intelligent edge computing. Howeve...

High-Performance p-Type Field-Effect Transistors Using Substitutional Doping and Thickness Control of Two-Dimensional Materials

Physics, Condensed Matter Physics, Engineering, Electrical Engineering, Materials Science, Information Science, Semiconductors and Information Devices,
two-dimensional materials   p-type field-effect transistors   substitutional doping   thickness control   contact resistance   quantum confinement effects   transition metal dichalcogenides  

High-Performance P-Type Field-Effect Transistors: Substitutional Doping and Thickness Control in Two-Dimensional Materials Academic Background As semiconductor technology progresses, silicon-based field-effect transistors (FETs) are approaching fundamental physical limits in performance enhancement. To overcome these challenges, researchers have be...

Scaled Vertical-Nanowire Heterojunction Tunnelling Transistors with Extreme Quantum Confinement

Chemistry, Nanoscience, Engineering, Electrical Engineering, Information Science, Semiconductors and Information Devices,
vertical nanowire   heterojunction   tunnelling transistor   quantum confinement   low-voltage operation   high drive current   subthreshold swing  

A Breakthrough in Achieving High-Performance, Energy-Efficient Electronics Using Vertically Scaled Nanowire Heterojunction Tunneling Transistors under Extreme Quantum Confinement Academic Background The rapid development of data-driven computing and artificial intelligence has set higher demands for energy-efficient electronic devices. However, fur...

Memristors with Analogue Switching and High On/Off Ratios Using a Van der Waals Metallic Cathode

Physics, Chemistry, Nanoscience, Engineering, Electrical Engineering, Materials Science, Information Science, Semiconductors and Information Devices, Artificial Intelligence,
memristor   van der Waals metal   analogue switching   high on/off ratio   neuromorphic computing   silver ion intercalation   low power consumption  

Research on Analog Memristors with Large On/Off Ratios Using 2D Van der Waals Metallic Cathodes Academic Background With the rapid development of artificial intelligence (AI) applications, traditional Von Neumann architectures are facing performance bottlenecks in data-intensive computing tasks. Neuromorphic computing is an emerging paradigm capabl...

Light-Emitting Diodes Based on Intercalated Transition Metal Dichalcogenides with Suppressed Efficiency Roll-Off at High Generation Rates

Chemistry, Nanoscience, Engineering, Electrical Engineering, Materials Science, Information Science, Semiconductors and Information Devices,
light-emitting diodes   transition metal dichalcogenides   efficiency roll-off   exciton-exciton annihilation   photoluminescence   electroluminescence   quantum efficiency  

Research Report on Light-emitting Diodes Based on Intercalated Transition Metal Dichalcogenides with Suppressed Efficiency Roll-off at High Generation Rates Background and Research Significance In recent years, light-emitting diodes (LEDs) based on two-dimensional (2D) materials have shown promising applications in fields such as display technology...

Fractional Quantum Hall Phases in High-Mobility n-Type Molybdenum Disulfide Transistors

Physics, Quantum Physics, Condensed Matter Physics, Information Science, Semiconductors and Information Devices,
Fractional Quantum Hall Effect   Molybdenum Disulfide   High Mobility   Cryogenic Electronics   Quantum Computing  

Research Report on the Paper on Fractional Quantum Hall Phases in High Mobility n-Type Molybdenum Disulfide Transistors Background and Motivation At low temperatures, field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) theoretically provide high carrier mobility, strong spin-orbit coupling, and intrinsic ...

CMOS-Compatible Strain Engineering for Monolayer Semiconductor Transistors

Chemistry, Nanoscience, Engineering, Electrical Engineering, Materials Science, Information Science, Semiconductors and Information Devices,
strain engineering   monolayer semiconductors   CMOS-compatible   transistor performance   silicon substrates   silicon nitride   nanoscale devices  

CMOS-Compatible Strain Engineering in Monolayer Semiconductor Transistors Academic Background With the continuous advancement of semiconductor technology, two-dimensional (2D) materials have garnered significant attention for their atomic-level thinness, which makes them ideal for high-density, low-power electronic devices. Among them, transition m...

High Sound Pressure Piezoelectric Micromachined Ultrasonic Transducers Using Sputtered Potassium Sodium Niobate

Engineering, Electrical Engineering, Information Science, Electronic Information, Semiconductors and Information Devices, Life Sciences, Bioengineering,
Piezoelectric Transducers   Potassium Sodium Niobate   High Sound Pressure   Micromachined   Ultrasonic Technology  

Advances in High Sound Pressure Piezoelectric Micromachined Ultrasonic Transducers Academic Background Ultrasonic transducers are widely used in object detection, non-destructive testing (NDT), biomedical imaging, and therapeutic treatments. Compared to traditional bulk ultrasonic transducers, piezoelectric micromachined ultrasonic transducers (PMU...

Study on the Piezoresistivity of Cr-Doped V2O3 Thin Film for MEMS Sensor Applications

Engineering, Mechanical Engineering, Electrical Engineering, Materials Science, Metallic Materials, Inorganic Non-Metallic Materials, Information Science, Semiconductors and Information Devices,
piezoresistive effect   MEMS sensors   Cr-doped V2O3 thin film   strain engineering   metal-insulator transition  

Study on the Piezoresistivity of Cr-Doped V₂O₃ Thin Film for MEMS Sensor Applications Academic Background Piezoresistive microelectromechanical systems (MEMS) sensors are devices that utilize the piezoresistive effect of a material to convert stress changes, induced by the physical property being observed, into resistance changes. These sensors, su...

A Microgripper Based on Electrothermal Al–SiO2 Bimorphs

Engineering, Mechanical Engineering, Electrical Engineering, Information Science, Electronic Information, Semiconductors and Information Devices,
microgripper   electrothermal actuation   bimorph   micromanipulation   electronic packaging  

Research on Electrothermally Driven Al-SiO₂ Bimorph Microgripper Academic Background Microgrippers play a crucial role in assembly and manipulation at the micro and nano scales, with wide applications in microelectronics, MEMS (Micro-Electro-Mechanical Systems), and biomedical engineering. To ensure the safe handling of delicate materials and micro...